NvSRAM is promising for IoT applications where devices operate in low activity frequency and standby leakage current essentially dominates the energy consumption. Among various proposed nvSRAMs, the 6T2C structure uses FeCaps as the non-volatile elements, and becomes one of the most encouraging options in terms of density and cost, especially after the discovery of ferroelectricity in CMOS-compatible HfO2. The proof-of-concept of the 6T2C nvSRAM with HfO2 FeCaps has been experimentally demonstrated by M. Kobayashi et al. However, a deep analysis of the 6T2C nvSRAM based on Hafnia FeCaps including its working principle and performance optimization is still lacking, which is critical for the further development of such technology.
This work comprehensively evaluates the performance of Hafnia-FECap-based 6T2C nvSRAM through simulations. The interplay between properties of transistors and FECaps is presented, and optimization strategies are proposed.